STGW30V60DF数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特性 Features

• Maximum junction temperature: TJ= 175 °C
• Tail-less switching off
• VCE(sat)= 1.85 V (typ.) @ IC= 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode

简介

STGW30V60DF属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGW30V60DF晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。