Bi-Directional Triode Thyristor

文件：751.58 Kbytes 页数：6 Pages

SEMIWELL

矽门微

Bi-Directional Triode Thyristor

文件：717.33 Kbytes 页数：5 Pages

WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Isc N-Channel MOSFET Transistor

文件：313.49 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：8N90K5；Package：TO-220FP；N-channel 900 V, 0.60 廓 typ., 8 A MDmesh??K5 Power MOSFET in a TO-220FP package

文件：711.2 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 1000V - 1.60OHM - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH TM MOSFET

文件：293.19 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages

文件：1.16474 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.56 廓,7 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

文件：706.65 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：310.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET in a TO-220FP package

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and • Worldwide best RDS(on) x area \n• Worldwide best FOM (figure of merit) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and • Worldwide best RDS(on) x area \n• Worldwide best FOM (figure of merit) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体