STF8N90K5

N沟道900 V、0.60 Ohm典型值、8 A MDmesh K5功率MOSFET，TO-220FP封装; • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. \n\n

STF8N90K5

Marking：8N90K5；Package：TO-220FP；N-channel 900 V, 0.60 廓 typ., 8 A MDmesh??K5 Power MOSFET in a TO-220FP package

STB8N90K5

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.68Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STB8N90K5

Zener-protected

STP8N90K5

N-channel900V,0.60廓typ.,8AMDmesh??K5PowerMOSFETinaTO-220package

STW8N90K5

Switchingapplications