N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a TO-220FP package

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and • Worldwide best RDS(on) x area \n• Worldwide best FOM (figure of merit) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 1.5A SOT89-3

STMICROELECTRONICS

意法半导体

Package：TO-243AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 3A SOT89-3

STMICROELECTRONICS

意法半导体

Package：TO-220-2 全封装，隔离接片；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：60V SCHOTTKY DIODE ITO-220AC

SMC Diode Solutions