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STF80N10F7

Ultra low on-resistance

Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. •Extremelylowgatecharge •Ultralowon-resistance •Lowgateinputresistance A

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF8100

SCHOTTKY RECTIFIER

150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMO

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

STF8120

SCHOTTKY RECTIFIER

Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

STF8150

SCHOTTKY RECTIFIER

Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

STF817

PNP MEDIUM POWER TRANSISTORS

DECRIPTION TheSTF817andSTN817arePNPtransistorsmanufacturedusingPlanarTechnologyresultinginruggedhighperformancedevices. ■SURFACE-MOUNTINGDEVICESINMEDIUMPOWERSOT-223ANDSOT-89PACKAGES ■AVAILABLEINTAPE&REELPACKING APPLICATIONS ■VOLTAGEREGULATION ■RELAYDRIV

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF817A

PNP MEDIUM POWER TRANSISTOR

Description TheSTF817A-STN817AarePNPtransistormanufacturedusingPlanarTechnologyresultinginruggedhighperformancedevices. Generalfeatures ■SURFACE-MOUNTINGDEVICESINMEDIUMPOWERSOT-223ANDSOT-89PACKAGES ■AVAILABLEINTAPE&REELPACKING Applications ■VOLTAGEREGULA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF8200

SCHOTTKY RECTIFIER

Features 150'CTJoperation Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability TrenchMOSSchottkytechnolo

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

STF8204

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

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三合微科

STF8209

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

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STF8209A

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

Samhop

三合微科

STF8211

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

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三合微科

STF8220

Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage. ●ESDProtected.

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STF8233

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

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三合微科

STF8234

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

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三合微科

STF826

PNP medium power transistor

Description TheSTF826isaPNPtransistormanufactured usingplanarTechnologyresultinginruggedhigh performancedevices. Features •Incompliancewiththe2002/93/ECEuropean directive •Availableintape&reelpacking •Surfacemountingdevicesinmediumpower SOT-223andSOT-89

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF826

PNP MEDIUM POWER TRANSISTORS

Features ■SURFACEMOUNTINGDEVICESINMEDIUM POWERSOT-223ANDSOT-89PACKAGES ■AVAILABLEINTAPE&REELPACKING ■INCOMPLIANCEWITHTHE2002/93/EC EUROPEANDIRECTIVE Applications ■VOLTAGEREGULATION ■RELAYDRIVER ■GENERICSWITCH Description TheSTF826andSTN826arePNPtrans

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF826_V01

PNP MEDIUM POWER TRANSISTORS

Features ■SURFACEMOUNTINGDEVICESINMEDIUM POWERSOT-223ANDSOT-89PACKAGES ■AVAILABLEINTAPE&REELPACKING ■INCOMPLIANCEWITHTHE2002/93/EC EUROPEANDIRECTIVE Applications ■VOLTAGEREGULATION ■RELAYDRIVER ■GENERICSWITCH Description TheSTF826andSTN826arePNPtrans

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF860

SCHOTTKY RECTIFIER

Features 150'CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

STF8810

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

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STF8N60DM2

N-channel 600 V, 550 mΩ typ., 8 A MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features Fast-recoverybodydiode Extremelylowgatechargeandinput capacitance Lowon-resistance 100avalanchetested Extremelyhighdv/dtruggedness Zener-protected Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode seri

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
ST/意法半导体
22+
TO-220FP-3
6004
原装正品现货 可开增值税发票
询价
ST/意法半导体
TO-220FP-3
6000
询价
ST/意法半导体
2023
TO-220FP-3
6000
公司原装现货/支持实单
询价
ST/意法半导体
23+
TO-220FP-3
4650
绝对原装公司现货
询价
STMicroelectronics
18+
NA
3491
进口原装正品优势供应QQ3171516190
询价
23+
N/A
46580
正品授权货源可靠
询价
STM
1809+
TO-220
1675
就找我吧!--邀您体验愉快问购元件!
询价
ST/意法半导体
21+
TO-220FP-3
8800
公司只做原装正品
询价
ST/意法
22+
ORIGINAL
25800
原装正品,品质保证,值得你信赖.
询价
STMicroelectronics
21+
DO-219AB(SMF)
29840
专业分立半导体,原装渠道正品现货
询价
更多STF8供应商 更新时间2024-4-30 15:47:00