Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance A

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STMICROELECTRONICS

意法半导体

丝印：80N240K6；Package：TO-220FP；N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel

文件：245.65 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

SCHOTTKY RECTIFIER

 150 'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MO

文件：1.04099 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150 'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：380.56 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：380.43 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

PNP MEDIUM POWER TRANSISTORS

DECRIPTION The STF817 and STN817 are PNP transistors manufactured using Planar Technology resulting in rugged high performance devices. ■ SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING APPLICATIONS ■ VOLTAGE REGULATION ■ RELAY DRIV

文件：57.84 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

PNP MEDIUM POWER TRANSISTOR

Description The STF817A - STN817A are PNP transistor manufactured using Planar Technology resulting in rugged high performance devices. General features ■ SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING Applications ■ VOLTAGE REGULA

文件：61.12 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

SCHOTTKY RECTIFIER

Features  150'C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technolo

文件：379.94 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：123.25 Kbytes 页数：8 Pages

SAMHOP

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：95.4 Kbytes 页数：6 Pages

SAMHOP

三合微科