N-channel 600 V, 550 mΩ typ., 8 A MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode seri

文件：714.55 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.30413 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220FP

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for a

文件：1.11883 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 0.95Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.59 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) -RDS(on) = 0.68Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.84 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) -RDS(on) =1.85Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.47 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 850V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.67 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 850V -1.1ohm - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：346.66 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) -RDS(on) = 0.79Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.56 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.65Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.23 Kbytes 页数：2 Pages

ISC

无锡固电