isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.95 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：F40NF03L；Package：TO-220FP；N-channel 30 V, 0.018, 40 A TO-220, TO-220FP STripFET Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：433.17 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 30 V, 0.018, 40 A TO-220, TO-220FP STripFET Power MOSFET

ST

意法半导体

N - CHANNEL 30V - 0.020 ohm - 40A TO-220 STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：82.05 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.018廓 - 40A - TO-220 STripFET??Power MOSFET

文件：254.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 30 V, 0.018, 40 A TO-220, TO-220FP STripFET Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：433.17 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体