STF11NM80MOSFET或IGBT规格书应用电路供应商报价-114ic电子网

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F11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
I11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
P11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：332.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STB11NM80	文件：582.11 Kbytes Page：14 Pages	N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET Description TheMDmesh™associatesthemultipledrainprocesswiththecompany’sPowerMesh™horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：949.78 Kbytes Page：17 Pages	N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：467.13 Kbytes Page：17 Pages	N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：949.78 Kbytes Page：17 Pages	N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：467.13 Kbytes Page：17 Pages	N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：582.11 Kbytes Page：14 Pages	N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET Description TheMDmesh™associatesthemultipledrainprocesswiththecompany’sPowerMesh™horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11NM80	文件：322.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STI11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：908.99 Kbytes Page：22 Pages	N-channel800V,0.35Ω,11AMDmesh™PowerMOSFETinD²PAK,TO-220FP,I²PAK,TO-220,TO-247 Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh™technology,which associatesth	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：582.11 Kbytes Page：14 Pages	N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET Description TheMDmesh™associatesthemultipledrainprocesswiththecompany’sPowerMesh™horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：467.13 Kbytes Page：17 Pages	N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：949.78 Kbytes Page：17 Pages	N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11NM80	文件：331.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STW11NM80	文件：435.48 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	STF11NM80MOSFET或IGBT	ST/意法	23+	NA/	3640	原厂直销,现货供应,账期支持!	询价
深圳兆威电子有限公司	STF11NM80MOSFET或IGBT开关IC	ST/意法	23+	TO220ISOFULLPACK	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市仟禧电子有限公司	STF11NM80MOSFET或IGBT开关IC	ST/意法	22+	TO-220	20000	保证原装正品,假一陪十	询价
深圳市威尔健半导体有限公司	STF11NM80MOSFET或IGBT开关IC	ST/意法	23+	TO-220F	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	STF11NM80MOSFET或IGBT开关IC	ST/意法	2022	TO-220F	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳硅原半导体有限公司	STF11NM80MOSFET或IGBT开关IC	ST/意法	23+	TO220-3	28533	原盒原标,正品现货诚信经营价格美丽假一罚十!	询价
深圳市宝隆宏业科技有限公司	STF11NM80MOSFET或IGBT开关IC	ST/意法	2122+	NB	29860	全新原装正品,价格优势一片起售,可做含税	询价
深圳市吉利鑫科技发展有限公司	STF11NM80MOSFET或IGBT开关IC	ST/意法	2022+	TO-220F	79999		询价
深圳市羿芯诚电子有限公司	STF11NM80MOSFET或IGBT开关IC	ST/意法	23+	N/A	14280	强势渠道订货 7-10天	询价
深圳市东来宝电子科技有限公司	STF11NM80MOSFET或IGBT开关IC	ST/意法	22+	to-220f	45500	郑重承诺只做原装进口现货	询价

更多STF11NM80MOSFET或IGBT供应商更新时间2024-6-21 17:06:00

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