N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：286.44 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：3NF06L；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92824 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-channel 60 V, 0.07 廓, 4 A, SOT-223 STripFET??II Power MOSFET

文件：251.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60-V (D-S) MOSFET

文件：1.00909 Mbytes 页数：6 Pages

VBSEMI

微碧半导体

N-channel 60 V, 0.07 廓, 4 A, SOT-223 STripFET??II Power MOSFET

文件：251.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N沟道60 V、0.07 Ohm典型值、4 A STripFET II功率MOSFET，SOT-223封装

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low threshold drive;

ST

意法半导体