丝印：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

文件：841.46 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.15 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 500V - 0.55??- 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s

文件：505.53 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：F10NK50Z；Package：TO-220FP；N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH™ Power MOSFET in TO-220FP package

Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designe

文件：525.78 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH™ Power MOSFET in TO-220FP package

Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designe

文件：525.78 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：10NK60Z；Package：TO-220FP；N-channel 600 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET Zener-protected TO-220FP narrow leads

Features ■ Extremely high dv/dt capability ■ 100 avalanche tested ■ Gate charge minimized ■ Very good manufacturing reliability Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based Powe

文件：275.83 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 500 V, 0.53 廓, 7 A DPAK, TO-220FP, TO-220 MDmesh??II Power MOSFET

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.1377 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) -RDS(on) = 0.63Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.67 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：10NM60N；Package：TO-220FP；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistanc

文件：907.61 Kbytes 页数：17 Pages

STMICROELECTRONICS

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丝印：10NM60ND；Package：TO-220FP；N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is

文件：1.2278 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体