丝印：10NK60Z；Package：TO-220FP；N-channel 600 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET Zener-protected TO-220FP narrow leads

Features ■ Extremely high dv/dt capability ■ 100 avalanche tested ■ Gate charge minimized ■ Very good manufacturing reliability Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based Powe

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N-channel 600 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET Zener-protected TO-220FP narrow leads

ST

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Extremely high dv/dt capability

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STMICROELECTRONICS

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N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESHTM Power MOSFET in a TO-220FP ultra narrow leads package

Features  Extremely high dv/dt capability  100 avalanche tested  Gate charge minimized  Zener-protected Description This high voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-esta

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STMICROELECTRONICS

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N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET

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