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STF11N52K3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 0.51Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:318.09 Kbytes 页数:2 Pages

ISC

无锡固电

STF11N52K3

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Description These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio

文件:1.16073 Mbytes 页数:20 Pages

STMICROELECTRONICS

意法半导体

STF11N60M2-EP

N-channel 600 V, 0.550 typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to

文件:305.39 Kbytes 页数:14 Pages

STMICROELECTRONICS

意法半导体

STF11N65M5

N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件:1.2819 Mbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

STF11N65M5

N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件:1.2819 Mbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

STF11NM50N

N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件:675.27 Kbytes 页数:16 Pages

STMICROELECTRONICS

意法半导体

STF11NM60N

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件:641.21 Kbytes 页数:20 Pages

STMICROELECTRONICS

意法半导体

STF11NM60N

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件:470.38 Kbytes 页数:17 Pages

STMICROELECTRONICS

意法半导体

STF11NM60N

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件:489.4 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

STF11NM60ND

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi

文件:530.46 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • Package:

    TO-220FP

  • Grade:

    Industrial

  • VDSS(V):

    800

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.4

  • Drain Current (Dc)_max(A):

    11

  • PTOT_max(W):

    35

  • Qg_typ(nC):

    44

供应商型号品牌批号封装库存备注价格
ST
13+
TO220F
2000
全新原装 可出样品
询价
ST
24+/25+
TO220
36000
100%原装正品真实库存,支持实单
询价
ST
2021+
原厂原封装
93628
原装进口现货 假一罚百
询价
ST
23+
TO220
6996
只做原装正品现货
询价
ST
21+
TO220
1516
十年信誉,只做原装,有挂就有现货!
询价
ST/意法
24+
TO220F
26
只做原厂渠道 可追溯货源
询价
ST/意法半导体
22+
TO-220-3
6004
原装正品现货 可开增值税发票
询价
ST/意法
22+
TO-220F
10000
原装正品
询价
ST专家
2021+
TO-220FP
6800
原厂原装,欢迎咨询
询价
ST/意法
15+
TO-220F
364
只做原装正品
询价
更多STF11供应商 更新时间2025-10-11 14:40:00