型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 0.51Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:318.09 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET Description These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio 文件:1.16073 Mbytes 页数:20 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600 V, 0.550 typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to 文件:305.39 Kbytes 页数:14 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a 文件:1.2819 Mbytes 页数:25 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a 文件:1.2819 Mbytes 页数:25 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220 Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding 文件:675.27 Kbytes 页数:16 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo 文件:641.21 Kbytes 页数:20 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo 文件:470.38 Kbytes 页数:17 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo 文件:489.4 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi 文件:530.46 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
技术参数
- Package:
TO-220FP
- Grade:
Industrial
- VDSS(V):
800
- RDS(on)_max(@ VGS=10V)(Ω):
0.4
- Drain Current (Dc)_max(A):
11
- PTOT_max(W):
35
- Qg_typ(nC):
44
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
13+ |
TO220F |
2000 |
全新原装 可出样品 |
询价 | ||
ST |
24+/25+ |
TO220 |
36000 |
100%原装正品真实库存,支持实单 |
询价 | ||
ST |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
询价 | ||
ST |
23+ |
TO220 |
6996 |
只做原装正品现货 |
询价 | ||
ST |
21+ |
TO220 |
1516 |
十年信誉,只做原装,有挂就有现货! |
询价 | ||
ST/意法 |
24+ |
TO220F |
26 |
只做原厂渠道 可追溯货源 |
询价 | ||
ST/意法半导体 |
22+ |
TO-220-3 |
6004 |
原装正品现货 可开增值税发票 |
询价 | ||
ST/意法 |
22+ |
TO-220F |
10000 |
原装正品 |
询价 | ||
ST专家 |
2021+ |
TO-220FP |
6800 |
原厂原装,欢迎咨询 |
询价 | ||
ST/意法 |
15+ |
TO-220F |
364 |
只做原装正品 |
询价 |
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