isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=11A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.48Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.65 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 500 V, 0.40 廓, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET

文件：522.71 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道500 V、0.4 Ohm、11 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，TO-220FP封装

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.\n\n Such series complem • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested \n• Very good manufacturing repeatability \n• Very low intrinsic capacitances;

ST

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.0359 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 500 V, 0.40 廓, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET

文件：522.71 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=11A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.48Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：352.4 Kbytes 页数：2 Pages

ISC

无锡固电