丝印：12N50U；Package：TO-220FP；N-channel 500 V, 0.55 Ω, 10 A TO-220FP Ultrafast MESH™ Power MOSFET

Features ■ 100 avalanche tested ■ Outstanding dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Very low RDS(on) ■ Extremely low trr Application ■ Switching applications – High voltage inverters specific for LCD TV – Lighting full bridge topology – Motor cont

文件：571.58 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.09242 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH?줞OSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such serie

文件：493.23 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.64Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.76 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.7 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：12NK80Z；Package：TO-220FP；N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Features ■ Extremely high dv/dt capability ■ Improved esd capability ■ 100 avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing reliability Applications ■ Switching applications Description These devices are N-channel Zener-protected Pow

文件：695.11 Kbytes 页数：22 Pages

STMICROELECTRONICS

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N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET

Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mos

文件：510.43 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.41Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.35 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：260.339 Kbytes 页数：10 Pages

STMICROELECTRONICS

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E-Band Faraday Isolator

Description: Model STF-12-S1 is a full band Faraday isolator that operates from 60 to 90 GHz. The Faraday isolator is constructed with a longitudinal, magnetized ferrite rod that causes a Faraday rotation of the incoming RF signal. The isolator offers 1.5 dB typical insertion loss and 28 dB nomin

文件：261.16 Kbytes 页数：3 Pages

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