isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.7 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：12NK80Z；Package：TO-220FP；N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Features ■ Extremely high dv/dt capability ■ Improved esd capability ■ 100 avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing reliability Applications ■ Switching applications Description These devices are N-channel Zener-protected Pow

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STMICROELECTRONICS

意法半导体

N沟道800 V、0.65 Ohm、10.5 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，TO-220封装

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • Extremely high dv/dt capability \n• Improved esd capability \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitances \n• Very good manufacturing reliability;

ST

意法半导体

N-channel 800V - 0.65廓 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET

文件：522.929 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to e

文件：342.58 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET ■ TYPICAL Ros(on) = 0.65 Q ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY APPLICATIONS

文件：151.86 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司