N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.09242 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件：294.07 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道650 V、0.39 Ohm典型值、8.5 A MDmesh M5功率MOSFET，TO-220FP封装

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superio • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.09242 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

• FEATURES • Drain Current ID= 8.5A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：341.97 Kbytes 页数：2 Pages

ISC

无锡固电

Very low intrinsic capacitance

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched am

文件：1.38052 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体