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STF12N65M5

N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF12N65M5

isc N-Channel Mosfet Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STD12N65M5

N-channel650V,0.39Ohm,8.5AMDmeshVPowerMOSFETDPAK,I2PAK,TO-220FP,TO-220,IPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD12N65M5

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI12N65M5

N-channel650V,0.39Ohm,8.5AMDmeshVPowerMOSFETDPAK,I2PAK,TO-220FP,TO-220,IPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STI12N65M5

iscN-ChannelMosfetTransistor

•FEATURES •DrainCurrentID=8.5A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STL12N65M5

Verylowintrinsiccapacitance

Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedam

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP12N65M5

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP12N65M5

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STP12N65M5

N-channel650V,0.39Ohm,8.5AMDmeshVPowerMOSFETDPAK,I2PAK,TO-220FP,TO-220,IPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STU12N65M5

N-channel650V,0.39Ohm,8.5AMDmeshVPowerMOSFETDPAK,I2PAK,TO-220FP,TO-220,IPAK

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STU12N65M5

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    STF12N65M5

  • 功能描述:

    MOSFET POWER MOSFET N-CH 650V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
STM
21+
TO220ISOFULLPACK
5000
专营原装正品现货,当天发货,可开发票!
询价
STM
21+
TO-220FP-3
5000
原装正品 有挂有货
询价
STM
19+
5000
TO-220FP-3
询价
ST/意法半导体
22+
TO-220-3
6006
原装正品现货 可开增值税发票
询价
STM
23+
TO-220FP-3
5000
原装现货支持送检
询价
ST/意法半导体
22+
SOT-23-5
23792
只做原装现货工厂免费出样欢迎咨询订单
询价
ST/意法半导体
TO-220-3
6000
询价
ST
23+
TO-220FP
12500
ST系列在售,可接长单
询价
ST/意法半导体
2023
TO-220-3
6000
公司原装现货/支持实单
询价
ST(意法半导体)
23+
TO-220F
7828
支持大陆交货,美金交易。原装现货库存。
询价
更多STF12N65M5供应商 更新时间2024-5-16 9:20:00