isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=11A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.48Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.65 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.32Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.11 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：989.75 Kbytes 页数：21 Pages

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N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：989.75 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.55172 Mbytes 页数：21 Pages

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丝印：140N10F4；Package：TO-220FP；N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP STripFET™ DeepGATE™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been es

文件：380.97 Kbytes 页数：13 Pages

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丝印：14N80K5；Package：TO-220FP；N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technol

文件：766.2 Kbytes 页数：16 Pages

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N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages

Description These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：1.31186 Mbytes 页数：26 Pages

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意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.38Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.06 Kbytes 页数：2 Pages

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N-channel 650 V, 0.33 廓, 12 A MDmesh??II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

Description This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the mos

文件：550.19 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体