丝印：140N10F4；Package：D2PAK；N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP STripFET™ DeepGATE™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been es

文件：380.97 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：140N10F4；Package：TO-220FP；N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP STripFET™ DeepGATE™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been es

文件：380.97 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：140N10F4；Package：TO-220；N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP STripFET™ DeepGATE™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been es

文件：380.97 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体