丝印：140N150；Package：TO-263；150V N-Ch Power MOSFET

Feature ® High Speed Power Switching ® Enhanced Body diode dvidicapabilly © 100 UIS tested ® Pb-free lead plating

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丝印：140N150；Package：TO-247；150V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dvidtcapability 100 UIS tested Pb-free lead plating

文件：549.06 Kbytes 页数：9 Pages

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丽正国际

丝印：140N150；Package：TO-263；150V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dvidtcapability 100 UIS tested Pb-free lead plating

文件：549.06 Kbytes 页数：9 Pages

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丽正国际

丝印：140N150；Package：TO-220；150V N-Ch Power MOSFET

Feature High Speed Power Switching Enhanced Body diode dvidtcapability 100 UIS tested Pb-free lead plating

文件：549.06 Kbytes 页数：9 Pages

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丝印：140N150；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description The RM140N150T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：255.06 Kbytes 页数：9 Pages

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