RM140N150BHD芯片代码丝印对应型号-114ic电子网

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140N150	文件：473.88 Kbytes Page：7 Pages	型号：RM140N150BHD；Package：TO-263；150V N-Ch Power MOSFET Feature ®HighSpeedPowerSwitching ®EnhancedBodydiodedvidicapabilly ©100UIStested ®Pb-freeleadplating	RECTRON Rectron Semiconductor
140N150	文件：549.06 Kbytes Page：9 Pages	型号：RM140N150BHD；Package：TO-247；150V N-Ch Power MOSFET Feature HighSpeedPowerSwitching EnhancedBodydiodedvidtcapability 100UIStested Pb-freeleadplating	RECTRON Rectron Semiconductor
140N150	文件：549.06 Kbytes Page：9 Pages	型号：RM140N150BT2；Package：TO-263；150V N-Ch Power MOSFET Feature HighSpeedPowerSwitching EnhancedBodydiodedvidtcapability 100UIStested Pb-freeleadplating	RECTRON Rectron Semiconductor
140N150	文件：549.06 Kbytes Page：9 Pages	型号：RM140N150BT7；Package：TO-220；150V N-Ch Power MOSFET Feature HighSpeedPowerSwitching EnhancedBodydiodedvidtcapability 100UIStested Pb-freeleadplating	RECTRON Rectron Semiconductor
140N150	文件：255.06 Kbytes Page：9 Pages	型号：RM140N150T2；Package：TO-220-3L；N-Channel Super Trench Power MOSFET Description TheRM140N150T2usesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealforhigh	RECTRON Rectron Semiconductor

更多140N150供应商更新时间2025-8-1 14:14:00