isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.34Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

丝印：17N80K5；Package：TO-220FP；N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220FP package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

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STMICROELECTRONICS

意法半导体

N-channel 250V - 0.14廓 - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General features ■ Low g

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STMICROELECTRONICS

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N-channel 550 V, 0.18 廓, 13 A, MDmesh??V Power MOSFET in D짼PAK, DPAK, TO-220FP and TO-220

Description The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

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STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

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STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applicati

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ISC

无锡固电

Low gate input resistance

Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency con

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丝印：18N60M6；Package：TO-220FP；N-channel 600 V, 230 mΩ typ., 13 A, MDmesh™ M6 Power MOSFET in a TO-220FP package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

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STMICROELECTRONICS

意法半导体

N-channel 650 V, 231 m typ., 12 A, MDmesh DM2 Power MOSFET in a TO-220FP package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

文件：234.67 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：18NM60N；Package：TO-220FP；N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding

文件：1.18003 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体