丝印：18N60M6；Package：TO-220FP；N-channel 600 V, 230 mΩ typ., 13 A, MDmesh™ M6 Power MOSFET in a TO-220FP package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

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N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-220FP package

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N-channel 600 V, 255 m typ., 9 A, MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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N-channel 600 V, 230 mΩ typ., 13 A, MDmesh M6 Power MOSFET in a D²PAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh M6 technology incorporate

文件：631.39 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 230 m typ., 13 A, MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：534.16 Kbytes 页数：16 Pages

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