STB18N60M6

Marking：18N60M6；Package：D2PAK；N-channel 600 V, 230 mΩ typ., 13 A, MDmesh M6 Power MOSFET in a D²PAK package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters •BoostPFCconverters Description ThenewMDmeshM6technologyincorporate

STD18N60M6

N-channel600V,230mtyp.,13A,MDmeshM6PowerMOSFETinaDPAKpackage

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

STF18N60M6

N-channel600V,230mΩtyp.,13A,MDmesh™M6PowerMOSFETinaTO-220FPpackage

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters •BoostPFCconverters Description ThenewMDmesh™M6technologyincorporat

STL18N60M6

N-channel600V,255mtyp.,9A,MDmeshM6PowerMOSFETinaPowerFLAT5x6HVpackage

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof