N-channel 650 V, 231 m typ., 12 A, MDmesh DM2 Power MOSFET in a TO-220FP package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

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STMICROELECTRONICS

意法半导体

N-channel 650 V, 231 mOhm typ., 12 A, MDmesh DM2 Power MOSFET in a TO-220FP package

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shif • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

ST

意法半导体

SOP8

ON

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TO220F

ST

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TO-220F

ST/意法

上传：深圳庞田科技有限公司