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STF13NM60ND中文资料意法半导体数据手册PDF规格书
STF13NM60ND规格书详情
描述 Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
• The worldwide best RDS(on)* area among fast
recovery diode devices
• 100 avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche capabilities
Applications
• Switching applications
产品属性
- 型号:
STF13NM60ND
- 制造商:
STMicroelectronics
- 功能描述:
POWER MOSFET - Rail/Tube
- 功能描述:
MOSFET N-CH 600V 11A TO-220FP
- 功能描述:
N-channel 600 V, 0.32 Ohm typ., 11 A FDmesh(TM) II Power MOSFET(with fast diode) in TO-220FP package
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
21+ |
NA |
3000 |
全新原装 |
询价 | ||
ST |
24+ |
NA |
5000 |
全新原装正品,现货销售 |
询价 | ||
ST/意法半导体 |
2511 |
TO-220-3 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST |
两年内 |
NA |
7763 |
实单价格可谈 |
询价 | ||
STM |
23+ |
TO-220FP-3 |
50000 |
原装正品 支持实单 |
询价 | ||
ST |
24+ |
NA |
3000 |
市场最低 原装现货 假一罚百 可开原型号 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ST/意法半导体 |
24+ |
TO-220-3 |
16960 |
原装正品现货支持实单 |
询价 | ||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |