isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in

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ISC

无锡固电

丝印：F11NM80；Package：TO-220FP；N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247

Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates th

文件：908.99 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Three PhaseNeutral Filters For Solar Technology Applications

Three Phase + Neutral Filters Single stage Solar technoloty applications Compact model for saving space Low leakage current

文件：182.31 Kbytes 页数：2 Pages

PREMO

普莱默

N-channel 100 V, 0.009 ohm, 110 A STripFET II Power MOSFET

Description These devices are N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom

文件：946.25 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

文件：379.03 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

文件：396.25 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

E-Band Faraday Isolator, 90˚ Twist Input

Description: Model STF-12-91 is a full band Faraday isolator that operates from 60 to 90 GHz. The Faraday isolator is constructed with a longitudinal, magnetized ferrite rod that causes a Faraday rotation of the incoming RF signal. The Faraday isolator offers 28 dB nominal isolation and 1.5 dB ty

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ERAVANT

E-Band Full Waveguide Band Compact Faraday Isolator, 90° Twist

Description: Model STF-12-91-C is a full band Faraday isolator that operates from 60 to 90 GHz. The Faraday isolator is constructed with a longitudinal, magnetized ferrite rod that causes a Faraday rotation of the incoming RF signal. The compact, robust package is ideal for system integration and

文件：287.03 Kbytes 页数：3 Pages

ERAVANT

E-Band, Mini Faraday Isolator, 0.750” Insertion Length, 90° Twist

FEATURES Full Band Coverage Low Insertion Loss High Isolation Compact Form Factor Resistant to Stray Magnetic Fields Backside Flange Screw Access 90 Degree Twist APPLICATIONS Test Lab Instrumentations Subassemblies

文件：590.52 Kbytes 页数：3 Pages

ERAVANT

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.69Ω(Max)@VGS= 10V DESCRIPTION ·Switching applications.

文件：277.64 Kbytes 页数：2 Pages

ISC

无锡固电