STD6528EF

NPN Silicon Transistor

Features •Verylowsaturationvoltage:VCE(sat)=0.2V(Max.) @IC=50mA,IB=5mA •HighDCcurrentgain:hFE=1000~2500 •SmallsizeSMDpackage Application •MicomDirectdriveandswitchingApplication

STD6528S

NPN Silicon Transistor

Application •MicomDirectdriveandswitchingApplication Features •Verylowsaturationvoltage:VCE(sat)=0.2V(Max.)@IC=50mA,IB=5mA •HighDCcurrentgain:hFE=1000~2500

STD6528S

NPN Silicon Transistor

Application •MicomDirectdriveandswitchingApplication Features •Verylowsaturationvoltage:VCE(sat)=0.2V(Max.)@IC=50mA,IB=5mA •HighDCcurrentgain:hFE=1000~2500

STD65N160M9

Marking：65N160M9；Package：DPAK；N-channel 650 V, 132 mΩ typ., 20 A MDmesh M9 Power MOSFET in a DPAK package

Description ThisN-channelPowerMOSFETisbasedonthemostinnovativesuper-junction MDmeshM9technology,suitableformedium/highvoltageMOSFETsfeaturingvery lowRDS(on)perarea.ThesiliconbasedM9technologybenefitsfromamulti-drain manufacturingprocesswhichallowsanenhanced

STD65N3LLH5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=65A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STD65N55

Marking：D65N55；Package：DPAK；N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh™ low voltage Power MOSFET

Generalfeatures ■Standardthresholddrive ■100avalanchetested Description ThisN-ChannelenhancementmodePower MOSFETisthelatestrefinementof STMicroelectronicunique“SingleFeatureSize™“ strip-basedprocesswithlesscriticalaligment stepsandthereforearemarkablemanufac

STD65N55F3

N-channel 55V - 8.0m ohm - 65A - DPAK STripFET TM Power MOSFET

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingSTripFET™F3technology.Itisdesignedtominimizeon-resistanceandgatechargetoprovidesuperiorswitchingperformance. Features •AEC-Q101qualified •100avalanchetested Applications •Switchingapplications

STD65N55LF3

N-channel 55 V, 7.0, 80 A DPAK STripFET III Power MOSFET

Description ThisproductisaN-channelenhancementmodePowerMOSFETbuiltwithSTripFET™IIItechnologywhichisespeciallytailoredtominimizedon-stateresistanceandgatecharge,providingsuperiorswitchingperformance. Features ■Lowthresholddrive ■100avalanchetested Application

STD65NF06

Marking：D65NF06；Package：DPAK；N-channel 60V - 11.5m廓 - 60A - DPAK/TO-220 STripFET??II Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”™ strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea

STD664S

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.