NPN Silicon Transistor

Features • Very low saturation voltage: VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 • Small size SMD package Application • Micom Direct drive and switching Application

文件：324.62 Kbytes 页数：5 Pages

KODENSHI

可天士

NPN Silicon Transistor

Features • Very low saturation voltage: VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 • Small size SMD package Application • Micom Direct drive and switching Application

文件：308.19 Kbytes 页数：4 Pages

AUK

NPN Silicon Transistor

Application • Micom Direct drive and switching Application Features • Very low saturation voltage: VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500

文件：301.33 Kbytes 页数：4 Pages

AUK

NPN Silicon Transistor

Application • Micom Direct drive and switching Application Features • Very low saturation voltage: VCE(sat)=0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500

文件：305.89 Kbytes 页数：4 Pages

KODENSHI

可天士

丝印：65N160M9；Package：DPAK；N-channel 650 V, 132 mΩ typ., 20 A MDmesh M9 Power MOSFET in a DPAK package

Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced

文件：336.04 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=65A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.2 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D65N55；Package：DPAK；N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh™ low voltage Power MOSFET

General features ■ Standard threshold drive ■ 100 avalanche tested Description This N-Channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufac

文件：210.45 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 55V - 8.0m ohm - 65A - DPAK STripFET TM Power MOSFET

Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Features • AEC-Q101 qualified • 100 avalanche tested Applications • Switching applications

文件：437.05 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement Mode MOSFET

Application | « Adaptor | « Charger » Power management © SMPS Standby Power

文件：2.03382 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

N-channel 55 V, 7.0, 80 A DPAK STripFET III Power MOSFET

Description This product is a N-channel enhancement mode Power MOSFET built with STripFET™ III technology which is especially tailored to minimized on-state resistance and gate charge, providing superior switching performance. Features ■ Low threshold drive ■ 100 avalanche tested Application

文件：804.26 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体