N-channel 60V - 0.014ohm - 60A - DPAK

Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

文件：413.77 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-CHANNEL 30V - 0.0075ohm - 60A DPAK STripFET??II POWER MOSFET

Description This application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives

文件：452.83 Kbytes 页数：9 Pages

STMICROELECTRONICS

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N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET??II POWER MOSFET

Description This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable

文件：455.75 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark

文件：324.34 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark

文件：324.34 Kbytes 页数：14 Pages

STMICROELECTRONICS

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N-Channel 60-V (D-S) MOSFET

Features ® Vos =60V.lo =50A Ros

文件：2.13544 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

HIGH VOLTAGE NPN POWER TRANSISTOR

DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO

文件：122.61 Kbytes 页数：6 Pages

STMICROELECTRONICS

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HIGH VOLTAGE NPN POWER TRANSISTOR

DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO

文件：42.76 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE NPN POWER TRANSISTOR

DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO

文件：122.61 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE NPN POWER TRANSISTOR

DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO

文件：42.76 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体