丝印：D65N55；Package：DPAK；N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh™ low voltage Power MOSFET

General features ■ Standard threshold drive ■ 100 avalanche tested Description This N-Channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufac

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STMICROELECTRONICS

意法半导体

N-channel 55V - 8.0m ohm - 65A - DPAK STripFET TM Power MOSFET

Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Features • AEC-Q101 qualified • 100 avalanche tested Applications • Switching applications

文件：437.05 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-Channel Enhancement Mode MOSFET

Application | « Adaptor | « Charger » Power management © SMPS Standby Power

文件：2.03382 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

N-channel 55 V, 7.0, 80 A DPAK STripFET III Power MOSFET

Description This product is a N-channel enhancement mode Power MOSFET built with STripFET™ III technology which is especially tailored to minimized on-state resistance and gate charge, providing superior switching performance. Features ■ Low threshold drive ■ 100 avalanche tested Application

文件：804.26 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-Channel 60 V (D-S) 175 째C MOSFET

文件：970.81 Kbytes 页数：8 Pages

VBSEMI

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N-Channel 60 V (D-S) 175 째C MOSFET

文件：998.87 Kbytes 页数：8 Pages

VBSEMI

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汽车级N沟道55 V、6.5 mΩ典型值、80 A STripFET F3功率MOSFET，DPAK封装

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique \\\"Single Feature Size™\\\" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high p • Standard threshold drive \n• 100% avalanche tested;

ST

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N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK package

This product is a N-channel enhancement mode Power MOSFET built with STripFET™ III technology which is especially tailored to minimized on-state resistance and gate charge, providing superior switching performance.\n • Low threshold drive• 100% avalanche tested;

ST

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