丝印：D1703L；Package：DPAK；N-CHANNEL 30V - 0.038Ω - 17A - DPAK STripFET™ II MOSFET

TYPICAL RDS(on) = 0.038 Ω
APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalan

文件：981.42 Kbytes 页数：10 Pages

STMICROELECTRONICS

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文件：423.9 Kbytes 页数：11 Pages

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文件：30.72 Kbytes 页数：1 Pages

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. FEATURES • Super Low On-Resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 17 mΩ MAX. (VGS = 4 V, ID = 5.0 A) • Low Ciss Ciss = 2180

文件：62.95 Kbytes 页数：8 Pages

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