N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 4

文件：268.84 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08807 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh™II MOSFET

ST

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08903 Mbytes 页数：9 Pages

VBSEMI

微碧半导体