N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 7.2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING D

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STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

ST

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08807 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08809 Mbytes 页数：9 Pages

VBSEMI

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