N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

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STMICROELECTRONICS

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N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such ser

文件：485.97 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 8廓 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET

文件：429.23 Kbytes 页数：15 Pages

STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

文件：1.08802 Mbytes 页数：9 Pages

VBSEMI

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N沟道600 V、7.3 Ohm典型值、1 A SuperMESH功率MOSFET，DPAK封装

This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for t • Extremely high dv/dt capability \n• ESD improved capability \n• 100% avalanche tested \n• Gate charge minimized;

ST

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