N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

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STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

文件：1.08804 Mbytes 页数：9 Pages

VBSEMI

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N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET

ST

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08799 Mbytes 页数：9 Pages

VBSEMI

微碧半导体