Thyristor-Diode Modules, Diode-Thyristor Modules

文件：1.84346 Mbytes 页数：4 Pages

SIRECT

矽莱克半导体

Thyristor-Diode Modules, Diode-Thyristor Modules

文件：480.11 Kbytes 页数：4 Pages

SIRECTIFIER

矽莱克电子

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max)( IC= 3A; IB= 0.15A) • DC Current Gain -hFE = 100(Min)@ IC= 3A • Fast -Switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • CCFL dirvers • Volt

文件：229.13 Kbytes 页数：2 Pages

ISC

无锡固电

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fa

文件：535.73 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fa

文件：535.73 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Low voltage fast-switching NPN power transistor

Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ This device is qualified for automotive application ■ Very low collector to emitter satur

文件：248.84 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS

文件：237.56 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS

文件：237.56 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS

文件：237.56 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：879.01 Kbytes 页数：8 Pages

Samhop

三合微科