isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max)( IC= 3A; IB= 0.15A) • DC Current Gain -hFE = 100(Min)@ IC= 3A • Fast -Switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • CCFL dirvers • Volt

文件：229.13 Kbytes 页数：2 Pages

ISC

无锡固电

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fa

文件：535.73 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Low voltage fast-switching NPN power transistor

文件：248.9 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

低压快速切换NPN功率晶体管

The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. • Very low collector to emitter saturation voltage \n• Fast-switching speed \n• High current gain characteristic \n• Surface-mounting DPAK (TO-252) power package in tape & reel (suffix “T4);

ST

意法半导体

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fa

文件：535.73 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Low voltage fast-switching NPN power transistor

Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ This device is qualified for automotive application ■ Very low collector to emitter satur

文件：248.84 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Low voltage fast-switching NPN power transistor

文件：248.9 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Low voltage fast-switching NPN power transistor

文件：248.9 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• This device is qualified for automotive application\n• High current gain characteristic\n• Very low collector to emitter saturation voltage• Surface-mounting DPAK (TO-252) power package in tape& reel (suffix “T4)\n• Fast-switching speed;

ST

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 3A DPAK

STMICROELECTRONICS

意法半导体