P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：704.08 Kbytes 页数：8 Pages

Samhop

三合微科

NPN Silicon Transistor

Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277

文件：89.12 Kbytes 页数：3 Pages

AUK

NPN Silicon Transistor

Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277

文件：230.16 Kbytes 页数：4 Pages

KODENSHI

可天士

NPN Silicon Transistor

Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277L

文件：199.13 Kbytes 页数：4 Pages

KODENSHI

可天士

NPN Silicon Transistor

Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277L

文件：159.08 Kbytes 页数：3 Pages

AUK

Power MOSFET

MOSFET – Power, N-Channel, Logic Level, DPAK 18 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • AEC Q101 Qualified − NTDV18N06L • These Devices are Pb−Free and are RoHS Compliant Typical

文件：92.06 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-channel 550 V, 0.18 廓, 13 A, MDmesh??V Power MOSFET in D짼PAK, DPAK, TO-220FP and TO-220

Description The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched am

文件：1.25315 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 230 m typ., 13 A, MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：534.16 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.198 廓 typ., 15 A MDmesh??V Power MOSFET in D짼PAK and DPAK packages

Description These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring hi

文件：1.02109 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

• FEATURES • Higher VDSS rating • Excellent switching performance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：299.97 Kbytes 页数：2 Pages

ISC

无锡固电