| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Thyristor-Diode Modules, Diode-Thyristor Modules 文件:480.11 Kbytes 页数:4 Pages | SIRECTIFIER 矽莱克电子 | SIRECTIFIER | ||
Thyristor-Diode Modules 文件:266.59 Kbytes 页数:4 Pages | SIRECTIFIER 矽莱克电子 | SIRECTIFIER | ||
丝印:DPAK;Package:TO-252;isc N-Channel MOSFET Transistor 文件:324.21 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
N-Channel 30-V (D-S) MOSFET 文件:1.01903 Mbytes 页数:8 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
N-channel 30V - 0.038廓 - 17A - DPAK STripFET??II Power MOSFET 文件:301.89 Kbytes 页数:13 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
N-channel 250 V, 0.14 廓, 17 A low gate charge STripFET??II Power MOSFET in D2PAK and DPAK packages 文件:986.34 Kbytes 页数:18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • This device is qualified for automotive application\n• High current gain characteristic\n• Very low collector to emitter saturation voltage• Surface-mounting DPAK (TO-252) power package in tape& reel (suffix “T4)\n• Fast-switching speed; | ST 意法半导体 | ST | ||
N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power MOSFET in a DPAK package This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with anew trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) inall packages.\n • Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss; | ST 意法半导体 | ST | ||
LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | ST 意法半导体 | ST | ||
Package:TO-252-3,DPak(2 引线 + 接片),SC-63;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 60V 3A DPAK | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
技术参数
- Package:
DPAK
- Grade:
Industrial
- Transistor Polarity:
NPN
- Collector-Emitter Voltage_max(V):
60
- Collector-Base Voltage_max(V):
80
- Collector Current_abs_max(A):
3
- Dc Current Gain_min:
100
- Test Condition for hFE (IC):
3
- Test Condition for hFE (VCE)_spec(V):
2
- VCE(sat)_max(V):
0.3
- Test Condition for VCE(sat) - IC:
2
- Test Condition for VCE(sat) - IB_spec(mA):
100
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AUK |
24+ |
162000 |
现货供应 |
询价 | |||
SEMTRON |
25+ |
SOT23-5 |
1320 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
DISCRETE |
2500 |
STM |
557500 |
询价 | |||
ST |
2015+ |
TO252D |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
ST |
24+ |
原厂原封 |
6523 |
进口原装公司百分百现货可出样品 |
询价 | ||
ST |
25+ |
TO252 |
18000 |
原厂直接发货进口原装 |
询价 | ||
ST |
24+ |
TO-252(2引线+接 |
3 |
原装现货假一罚十 |
询价 | ||
AUK |
24+ |
TO-92 |
5000 |
只做原装公司现货 |
询价 | ||
ST |
1725+ |
? |
7500 |
只做原装进口,假一罚十 |
询价 | ||
ST |
22+ |
TO-252 |
5000 |
原装现货库存.价格优势 |
询价 |
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