N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power MOSFET in a DPAK package

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with anew trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) inall packages.\n • Very low on-resistance\n• Very low gate charge• High avalanche ruggedness\n• Low gate drive power loss;

ST

意法半导体

丝印：180N4F6；Package：DPAK；N-channel 40 V, 2.5 m廓 typ., 80 A STripFET??F6 Power MOSFET in a DPAK package

文件：775.21 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications  Power tools Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gat

文件：680.85 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

TO-252

ST/意法

上传：深圳市天芯威科技有限公司

TO-252

ST/意法

上传：深圳庞田科技有限公司