丝印：180N4F6；Package：TO-220；N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications  Power tools Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gat

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STMICROELECTRONICS

意法半导体

N沟道40 V、3.8 mOhm典型值、120 A STripFET F6功率MOSFET，TO-220封装

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CHANNEL 40V 120A TO220

STMICROELECTRONICS

意法半导体

N-channel 40 V, 2.5 m廓 typ., 80 A STripFET??F6 Power MOSFET in a DPAK package

文件：775.21 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体