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STB11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43typ.,9AMDmeshVPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43廓typ.,9AMDmesh??VPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11N65M5	文件：295.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STD11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43廓typ.,9AMDmesh??VPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STD11N65M5	文件：306.09 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STD11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43typ.,9AMDmeshVPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43廓typ.,9AMDmesh??VPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11N65M5	文件：291.95 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STF11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43typ.,9AMDmeshVPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STL11N65M5	文件：1.04176 Mbytes Page：14 Pages	N-channel650V,0.475??typ.,8.5AMDmesh??M5PowerMOSFETinaPowerFLAT??5x5package Description ThisdeviceisanN-channelPowerMOSFET basedonMDmesh™M5innovativevertical processtechnologycombinedwiththewellknownPowerMESH™horizontallayout.The resultingproductoffersextremelylowonresistance,makingitparticularlysuitablefor applicationsrequiringhighpo	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43typ.,9AMDmeshVPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11N65M5	文件：246.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STP11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43廓typ.,9AMDmesh??VPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STU11N65M5	文件：314.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STU11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43廓typ.,9AMDmesh??VPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STU11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43typ.,9AMDmeshVPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	STD11N65M5IC	ST/意法	23+	TO-252	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市百域芯科技有限公司	STD11N65M5IC	ST/意法	21+	TO-252	5000	优势供应实单必成可开增值税13点	询价
深圳市华鑫创达电子有限公司	STD11N65M5IC	ST/意法	22+	TO-252	10000	公司原装现货,欢迎咨询	询价
深圳市中联芯电子有限公司	STD11N65M5IC	ST/意法	23+	TO-252	5000	原装正品实单必成	询价
深圳市安富世纪电子有限公司	STD11N65M5MOS(场效应管)	ST/意法	21+	TO-252	50000	终端可免费提供样品,欢迎咨询	询价
深圳市威尔健半导体有限公司	STD11N65M5MOS(场效应管)	ST/意法	23+	TO-252	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	STD11N65M5MOS(场效应管)	ST/意法	2022	TO-252	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市科恒伟业电子有限公司	STD11N65M5MOS(场效应管)	ST/意法	21+	TO-252	9852	只做原装正品现货!或订货假一赔十!	询价
深圳市君亿电子科技有限公司	STD11N65M5原装	ST	22+	TO-252	8700	原装现货	询价
柒号芯城电子商务(深圳)有限公司	STD11N65M5原装	ST	2023+	TO-252	700000	柒号芯城跟原厂的距离只有0.07公分	询价

更多STD11N65M5IC供应商更新时间2024-6-20 17:18:00

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