STU11N65M5中文资料意法半导体数据手册PDF规格书

描述 Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

特性 Features

■ Worldwide best RDS(on) * area

■ Higher VDSS rating and high dv/dt capability

■ Excellent switching performance

■ 100 avalanche tested

Applications

■ Switching applications