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STU10NM65N规格书详情
Description
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
产品属性
- 型号:
STU10NM65N
- 功能描述:
MOSFET N-Channel 650V Power MDmesh
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
3324 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
22+ |
TO-251 |
100145 |
询价 | |||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST/意法 |
23+ |
IPAKTO-251 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
st |
2023+ |
TO-251 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ST |
23+ |
TO-251 |
2530 |
原厂原装正品 |
询价 | ||
ST/意法 |
22+ |
TO-251 |
100145 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ST |
22+ |
TO-251 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ST |
23+ |
TO-251 |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
23+ |
TO-251 |
33500 |
全新原装真实库存含13点增值税票! |
询价 |