N-CHANNEL 24V - 0.0044 ohm - 80A DPAK STripFET??III POWER MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on) * Qg industry’s benchmark ■ Conduction los

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STMICROELECTRONICS

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Power MOSFET

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ONSEMI

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Power MOSFET

文件：102.59 Kbytes 页数：6 Pages

ONSEMI

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Very low gate charge

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STMICROELECTRONICS

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N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET

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STMICROELECTRONICS

意法半导体

N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET

文件：463.1 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET

文件：463.1 Kbytes 页数：15 Pages

STMICROELECTRONICS

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单 N 沟道，功率 MOSFET，24V，110A，4.6mΩ

Automotive Power MOSFET. 24V, 110A, 4.6 mOhm, Single N-Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Planar HD3e Process for Fast Switching Performance\n• Body Diode for Low trr and Qrr and Optimized for Synchronous Operation 24 VOLTS\n• Low Ciss to Minimize Driver Loss\n• Optimized Qgd * RDS(on) for Shoot-Through Protection\n• Low Gate Charge\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compli;

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N沟道80 V、0.0056 Ohm典型值、110 A STripFET F6功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

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N-CHANNEL 24V - 0.0044 ohm - 80A DPAK STripFET™ III POWER MOSFET

ST

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