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STB11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43typ.,9AMDmeshVPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43廓typ.,9AMDmesh??VPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STB11N65M5	文件：295.27 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STD11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43廓typ.,9AMDmesh??VPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STD11N65M5	文件：306.09 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STD11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43typ.,9AMDmeshVPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43廓typ.,9AMDmesh??VPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STF11N65M5	文件：291.95 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STF11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43typ.,9AMDmeshVPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STL11N65M5	文件：1.04176 Mbytes Page：14 Pages	N-channel650V,0.475??typ.,8.5AMDmesh??M5PowerMOSFETinaPowerFLAT??5x5package Description ThisdeviceisanN-channelPowerMOSFET basedonMDmesh™M5innovativevertical processtechnologycombinedwiththewellknownPowerMESH™horizontallayout.The resultingproductoffersextremelylowonresistance,makingitparticularlysuitablefor applicationsrequiringhighpo	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43typ.,9AMDmeshVPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STP11N65M5	文件：246.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STP11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43廓typ.,9AMDmesh??VPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STU11N65M5	文件：314.28 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STU11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43廓typ.,9AMDmesh??VPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
STU11N65M5	文件：1.2819 Mbytes Page：25 Pages	N-channel650V,0.43typ.,9AMDmeshVPowerMOSFETinD2PAK,DPAK,TO-220FP,TO-220andIPAKpackages Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	STB11N65M5贴片三极管	ST/意法	23+	TO-263	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	STB11N65M5贴片三极管	ST/意法	2022	TO-263	80000	原装现货,OEM渠道,欢迎咨询	询价
中科航电（深圳）电子集团有限公司	STB11N65M6	ST		N-MOSFET650V11ASTB11	93480	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市昌和盛利电子有限公司	STB11NB40	ST	23+	TO-263	8795		询价
深圳市星佑电子有限公司	STB11NB40	ST	06+	TO-263	8000	原装库存	询价
深圳市利加科技有限公司	STB11NB40	ST	16+	TO-263	10000	全新原装现货	询价
深圳市鑫宇杨电子科技有限公司	STB11NB40	ST	2020+	TO-263	350000	100%进口原装正品公司现货库存	询价
深圳市宇集芯电子有限公司	STB11NB40	ST	24+	TO-263	90000	一级代理商进口原装现货、假一罚十价格合理	询价
深圳兆威电子有限公司	STB11NB40	VB	2019	D2PAK	55000	绝对原装正品假一罚十!	询价
深圳市亿智腾科技有限公司	STB11NB40	ST	2021+	TO-263	6430	原装现货/欢迎来电咨询	询价

更多STB11N65M5贴片三极管供应商更新时间2024-6-21 11:00:00

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