Power Management Switch Applications High-Speed Switching Applications

○ Power Management Switch Applications ○ High-Speed Switching Applications • 2.5-V drive • Low ON-resistance： RDS(ON) = 23.8 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 14.3 mΩ (max) (@VGS = 3.5 V) RDS(ON) = 12 mΩ (max) (@VGS = 4

文件：209.07 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

文件：227.6 Kbytes 页数：6 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：N-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 10 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS 20 V \nGate-Source voltage VGSS +/-12 V ;

Toshiba

东芝