Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High Speed Switching Applications

文件：173.63 Kbytes 页数：7 Pages

TOSHIBA

东芝

Small-signal MOSFET 2 in 1

Polarity：N-ch×2\nGeneration：U-MOSⅢ\nInternal Connection：Independent\nComponent Product (Q1)：SSM6K25FE\nComponent Product (Q2)：SSM6K25FE\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current (Q1) ID 0.5 A \nDrain-Source voltage (Q1) VDSS 20 V \nGate-Source voltage (Q1) VGSS ±12 V \nDrain current (Q2) ID 0.5 A \nDrain-Source voltage (Q2) VDSS 20 V \nGate-Source voltage (Q2) VGSS ±12 V ;

Toshiba

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.82 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■ TYPICAL RDS(on)= 0.7Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ INDUST

文件：193.55 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.31 Kbytes 页数：2 Pages

ISC

无锡固电