Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High-Speed Switching Applications

文件：241.11 Kbytes 页数：9 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：N-ch + P-ch\nInternal Connection：Independent\nComponent Product (Q1)：SSM6K24FE\nComponent Product (Q2)：SSM6J25FE\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current (Q1) ID 0.5 A \nDrain-Source voltage (Q1) VDSS 30 V \nGate-Source voltage (Q1) VGSS +/-12 V \nDrain current (Q2) ID -0.5 A \nDrain-Source voltage (Q2) VDSS -20 V \nGate-Source voltage (Q2) VGSS +/-12 V \nPower Dissipation PD 0.5 W ;

Toshiba

东芝

Surface Mount PAR® Transient Voltage Suppressors

FEATURES • Low-profile package • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Unidirectional only • Excell

文件：130.38 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Transient Voltage Suppression Diodes

文件：1.3967 Mbytes 页数：6 Pages

LITTELFUSE

力特