CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category

High Speed Switching Applications • Small package • Low on resistance: Ron = 105 mΩ (max) (@VGS = 4 V) Ron = 140 mΩ (max) (@VGS = 2.5 V) • High-speed switching: ton = 16 ns (typ.) toff = 15 ns (typ.)

文件：160.3 Kbytes 页数：6 Pages

TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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High Speed Switching Applications

文件：166.14 Kbytes 页数：6 Pages

TOSHIBA

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High Speed Switching Applications

文件：166.14 Kbytes 页数：6 Pages

TOSHIBA

东芝

CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category

Toshiba

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