SSF65R190SG规格书应用电路供应商报价ISC-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
65R190	文件：450.41 Kbytes Page：6 Pages	20A竊?50VN-CHANNELMOSFET	KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司	KIA
IIPP65R190CFD	文件：339.16 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPW65R190CFD	文件：335.92 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA65R190CFD	文件：261.04 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB65R190CFD	文件：189.53 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R190CFDA	文件：2.19785 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R190CFD	文件：331.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP65R190CFD	文件：339.16 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPP65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPP65R190CFDA	文件：2.19785 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

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供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	SSF65R190SG	超致		TO-220F	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市明嘉莱科技有限公司	SSF65R190SG	超致	24+	TO-220F	880000	明嘉莱只做原装正品现货	询价
艾睿国际（香港）有限公司	SSF65R260S2	上海超致	2112+	TO220F	105000	1000个/盒一级代理专营品牌!原装正品,优势现货,长	询价
深圳市河锋鑫科技有限公司	SSF65R260S2	超致	2020+	TO-220F/TO-220	7600		询价
深圳市斌能达电子科技有限公司	SSF65R260S2	超致	2023+	TO-220F/TO-220	6000	全新原装深圳仓库现货有单必成	询价
深圳市鑫炜纳电子有限公司	SSF65R260S2	超致	2022+	TO-220F/TO-220	7600	原厂原装,假一罚十	询价
易创佳业科技（深圳）有限公司	SSF65R260S2	上海超致	23+	TO220F	22820	原装正品，支持实单	询价
深圳市力仕科电子科技有限公司	SSF65R260S2	超致	20+	TO-220F/TO-220	6000		询价
深圳市艾兴电子有限公司	SSF65R260S2	超致	TO-220F/TO-220		6000		询价
深圳市芯城未来科技有限公司	SSF65R260S2	超致	TO-220F/TO-220		6000		询价

更多SSF65R190SG供应商更新时间2024-6-22 11:09:00

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