SIP/SIE 500 NON-ISOLATED SERIES

DESCRIPTION SIP/SIE non-isolated step-down DC/DC converters deliver high efficiency and excellent transient response in an industry standard SIP package. The SIP/SIE series has output voltages ranging from 1.2 to 3.3V and up to 6 amps of output current. The SIE model has power OK and remote sense

文件：411.85 Kbytes 页数：2 Pages

POWER-ONE

SIP/SIE 500 NON-ISOLATED SERIES

DESCRIPTION SIP/SIE non-isolated step-down DC/DC converters deliver high efficiency and excellent transient response in an industry standard SIP package. The SIP/SIE series has output voltages ranging from 1.2 to 3.3V and up to 6 amps of output current. The SIE model has power OK and remote sense

文件：411.85 Kbytes 页数：2 Pages

POWER-ONE

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses • TrenchFET®Power MOSFET • Ultra Low Thermal Resistance Using Top Exposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Ex

文件：118.64 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses • TrenchFET®Power MOSFET • Ultra Low Thermal Resistance Using Top Exposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Ex

文件：169.98 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen II Power MOSFET • Ultra Low Thermal Resistance Using Top- Exposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size •

文件：195.62 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen II Power MOSFET • Ultra Low Thermal Resistance Using Top- Exposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size •

文件：195.62 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 30-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at t

文件：231.1 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 20-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is  extracted and optimized over the  −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at

文件：234.64 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen II Power MOSFET • Ultra Low Thermal Resistance Using Top- Exposed PolarPAK® Package for Double- Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size

文件：195.59 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen II Power MOSFET • Ultra Low Thermal Resistance Using Top- Exposed PolarPAK® Package for Double- Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size

文件：195.59 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司